SESSION A : Silicon nano-crystal based high density memory devices |
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| ORAL PRESENTATIONS |
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A-1
9h15 |
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Invited : " Alternatives to conventional Non-Volatile memory: status and perspective"
Agostino Pirovano & Roberto Bez |
A-2
9h35 |
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Influence of Silicon Nanocrystal Size and Density on the performance of non-volatile memory arrays
R.A. Rao, H.P. Gasquet, R.F. Steimle, G. Rinkenberger, S. Straub, R. Muralidhar, S.G.H. Anderson, J.A.Yater, J.C. Ledezma, J. Hamilton, B. Acred, C.T. Swift, B. Hradsky, J. Peschke, M. Sadd, E.J. Prinz, K.M. Chang, B.E. White Jr. |
A-3
9h55 |
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Single-electron phenomena in ultra-scaled floating-gate devices and their impact on electrical characteristics
D. Deleruyelle, G. Molas, B. De Salvo, M. Gely, D. Lafond |
10h15 |
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Poster presentation and coffee break |
A-4
11h00 |
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Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memory applications
C. Bonafos, H. Coffin, S. Schamm, M. Carrada, N. Cherkashin, G.B. Assayag, P. Dimittrakis, P. Normand, M. Perego, M. Fanciulli, Claverie |
A-5
11h20 |
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Time-dependent simulation of the program and erase operations of nanocrystal Flash memories
A. Campera, G. Iannaccone |
A-6
11h40 |
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A model for the channel potential of charge-trapping memories and its implications for device scaling
M. Sadd, S.A. Anderson, B. Hradsky, R. Muralidhar, E.J. Prinz, R. Rao, S. Straub, R.F. Steimle, C.T. Swift, B.E. White, J.A. Yater |
| POSTERS |
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AP-1 |
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In-line characterization of silicon nano-crystals grown on high-k tunnel dielectrics
E. Nolot, P. Mur, S. Favier, M.L. Villani |
AP-2 |
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Discrete multilevel charging description of silicon nano-crystals memories
C. Busseret, S. Ferraton, L. Montès, J. Zimmermann |
AP-3 |
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On the saturation mechanism in the Ge nanocrystals based non volatile memory
M. Kanoun, C. Busseret, T. Baron, A. Souifi |
AP-4 |
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Long charge retention time in novel memory devices based on semiconductor quantum dots
C. Balocco, S.W. Lin, M. Missous, A.M. Song |
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