| SESSION E : NV Innovative architectures and materials |
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| ORAL PRESENTATIONS |
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E-1
14h00 |
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Invited : " NVM based on FinFet device structures "
F. Hofmann , M. Specht, U. Dorda, R. Kömmling, L. Dreeskornfeld, J. Kretz, M. Staedele, W. Rösner, L. Risch |
E-2
14h30 |
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Modeling of a double-gate FinFlash memory
S. Jacob, B. De Salvo, G. Le Carval, S. Deleonibus |
E-3
14h50 |
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3D simulation study of gate and noise coupling in advanced floating gate non volatile memories
A. Ghetti, L. Bortesi, A. Mauri, L; Vendrame |
E-4
15h10 |
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Cost-competitive embedded non-volatile technology for Flash and EEPROM applications
D. Dormans, D. Boter, J. Dubois, J. Garbe |
15h30 |
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Poster presentation and coffee break |
E-5
16h00 |
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Composition control and ferroelectric properties of sidewall Sr08Bi22Ta2O0 in integrated 3-dimensional ferroelectric capacitors
L. Goux, J.G. Lisoni, M. Schwitters, V. Paraschiv, D. Maes, L. Haspeslagh, D.J. Wouters, N. Menou, Ch. Turquat, V. Madigou, C. Muller, R. Zambrano |
E-6
16h20 |
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Technological advances for memory applications : crystalline high-K gate dielectrics and alternatively doped gates
Y. Stefanov, R. Komaragiri, U. Schwalke |
E-7
16h40 |
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A two-terminal semiconductor memory made in a single nanolithography step
A.M. Song, M. Missous, W. Seifert |
E-8
17h00 |
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Development of atomic layer deposition processes for multicomponent oxide dielectrics
M. Vehkamäki, M. Ritala, M. Leskelä |
| POSTERS |
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EP-1 |
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A macro model of programmable metallization cell devices
N.E. Gilbert, C. Gopalan, M. N. Kozicki |
EP-2 |
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CuTCNQ based organic non-volatile memories: downscaling, stress tests, and temperature effect on I-V curves
R. Müller, J. Genoe, P. Heremans |
EP-3 |
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Organic electrically bistable materials for non-volatile memory applications
A. Pirovano, S. Conoci, R. Sotgiu, S. Petralia, F. Buonocore |
EP-4 |
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Growth at low temperature of very high-K material on silicon
M. Detalle, E. Fribourg-Blanc, E. Cattan, D. Remiens |
EP-5 |
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Analysis of US patents (1966-Nov. 2004) in phase charge memory
S. D. Savransky, T.C. Wei |
EP-6 |
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Effects of threshold switching and parasitic capacitance in the programming transient of chalcogenide phase-change memories
D. Ielmini, D. Mantegazza, A.L. Lacaita, A. Pirovano, F. Pellizzer |
EP-7 |
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Economics of Alternative Nonvolatile-Memories
R. Andrei |
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