| SESSION F : Memories and high- k dielectrics |
|
|
| ORAL PRESENTATIONS |
|
F-1
9h00 |
|
Use of W damascene as true metal1 in a 130 nm flash technology
S. Louwers |
F-2
9h20 |
|
Investigation of SiO 2/HfO 2 gate stacks for application to non-volatile memory devices
J. Buckley, B. De Salvo, G. Ghibaudo, M. Gely, J.F. Damlencourt, F. Martin, G. Nicotra, S. Deleonibus |
F-3
9h40 |
|
Scaling down the interpoly dielectric for next generation flash memory : challenges and opportunities
B. Govoreanu, D. Brunco, J. Van Houdt |
F-4
10h00 |
|
ISSG RTO (In-situ Steam Generation Rapid Thermal Oxidation) grown tunnel oxide on advanced FLOTOX E 2PROM memories
G. Festes, S. Angle, J.-M. Bédrine, M. Berrebi, M. Cerisier, E. Daemen, A. Dumas, M. Grégoire, E. Hugonnard, P. Rohr, E. Serres, A. Solere |
10h20 |
|
Poster presentation and coffee break |
F-5
10h50 |
|
SONOS flash memories with HfO 2 or HfSiON
R. Van Schaijk, M. Van Duuren, F. Neuilly, W. Baks, A. H. Miranda, M. Slotboom, N. Akil, P.G. Tello |
F-6
11h10 |
|
Fully compatible novel SNONOS structure for improved electrical performance in NAND flash memories
J.H. Han, J.K. Kim, S.H. Lee, S. Jeon, C. Kim |
F-7
11h30 |
|
Scaling effects in dual-bit split-gate nitride memory devices
L. Breuil, L. Haspeslagh, M. Lorenzini, J. De Vos, J. Van houdt |
F-8
11h50 |
|
Low voltage and low power embedded 2T-SONOS flash memories
M. Slotboom, D. Dormans, M. Van Duuren, R. Van Schaijk, N. Akil, R. Beurze |
| POSTERS |
|
FP-1 |
|
Retention reliability improvement using nitride with varying trap density in SONOS type non-volatile memory
J.H. Kim, J.H. Han, Y.S. Min, M.K. Kim, Y.S. Jeong, S. Jeon, J.W. Hyun, S.H. Lee, H.S Chae, S.D. Chae, C. Kim |
FP-2 |
|
Flash memory with high-k tunnel dielectrics : comparative retention study
P. Blomme, A. Akheyar, J. Van Houdt, K. De Meyer |
FP-3 |
|
A 4 MegaBit, 128-bit data embeded flash memory allowing high-speed in place code execution
M. Combe, J.-M. Daga |
FP-4 |
|
Lifetime model and procedure for failure rate prediction of moving bits in case of room temperature retention
T. Yao, D. Medjahed, P. Gassot, A. Lowe, P. Cacharelis |
FP-5 |
|
EEPROM retention time extrapolation from floating gate SILC measurements
S. Burignat, N. Baboux, C. Plossu, P. Boivin |
FP-6 |
|
A new reliable P/E methodology for fully fowler-nordheim operating non volatile memories
F. Irrera, G. Puzzilli |
FP-7 |
|
STI engineering for high program & erase performance of STI-bounded nitride storage flash memory cells
M. Isler, J.-M. Schley, S. Riedel, T. Mikolajick, C. Ludwig, K.-H. Kuesters, G. Tempel, J.-U. Sachse, P. Deconinck, R. Mikalo, R. Reichelt, N. Schulse, E. Stein v. Kamienski, M. Strassburg, J. Willer, F. Lau, R. Hagenbeck, P. Haibach |
FP-8 |
|
Low temperature postmetallisation annealing of high-k dielectrics
Y.F. Loo, S. Taylor, P. Taechakumput, A.C. Jones, P.R. Chalker, L.M. Smith |
FP-9 |
|
EEPROM failure analysis methodology : can progammed charges be measured directly ?
C. De Nardi, R. Desplats, P. Perdu, F. Beaudoin, J.-L. Gauffier |
FP-10 |
|
Flash memory cell : an automated diagnosis tool for geometric failures
B. Saillet, J.-M. Portal, D. Née |
FP-11 |
|
A novel embedded OTP NVM using standar foundry CMOS logic technology
BM. Fliesler, G. Rosendale, J. Wang, C. Ng, Z.S. Liu, J. Peng |
|