Welcome ICMTD'07

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International Conference on Memory Technology and Design

ICMTD'07 : May7-10th 2007, Giens, South of France

 

ICMTD’07 – PRELIMINARY PROGRAM

SESSION B : PHASE CHANGE MEMORY

B-1
14 h00

  Invited : “Phase-Change Memory – Present and Future”
H.-L. Lung (Macronix), M. Breitwisch (IBM), T. Happ (Qimonda), C. Lam (Qimonda)
.
B-2
14h30
  Heater electrode engineering and analysis of series resistance in phase change memory
C.W. Jeong, D.H. Kang, D.W. Ha, Y.J. Song, J.H. Oh, J.H. Kong, J.H. Yoo, J.H. Park, K.C. Ryoo, D.W. Lim, S.S. Park, J.I. Kim, Y.T. Oh, J.S. Kim, J.M. Shin, J. Park, Y. Fai, Y.T. Kim, G.H. Koh, G.T. Jeong, H.S. Jeong, K. Kim (Samsung)
.
B-3
14h50
  Effects of the crystallization statistics on programming distributions in phase-change memory arrays
D. Mantegazza (Politecnico di Milano), D. Ielmini (Politecnico di Milano), A. Pirovano (STMicroelectronics), A.L. Lacaita (Politecnico di Milano), E. Varesi (STMicroelectronics), F. Pellizzer (STMicroelectronics), R. Bez (STMicroelectronics)
.
B-4
15h10
  A Low Power PRAM using a Power-Dependant Data Inversion Scheme
B.-D. Yang (Chungbuk National University), J.E. Lee (Chungbuk National University), J.S. Kim (Chungbuk National University), J.K. Yun (Chungbuk National University), S.Y. Lee ( ETRI) , Y.S. Park (ETRI ) , S.M. Yoon (ETRI ) , B.G. Yu (ETRI )
.
15h30
  Coffee break
.
B-5
16h00
  Threshold switching in doped SbTe phase change line cells
F. J. Jedema (NXP Semiconductors) , J. van der Wagt (NXP Semiconductors), M. A.A. in ‘t Zandt (NXP Semiconductors), R. A.M. Wolters (NXP Semiconductors), B. W.S.M.M. Ketelaars (Philips Research), R. Delhougne (NXP Semiconductors), D. Tio Castro (NXP Semiconductors), D. J. Gravesteijn (NXP Semiconductors), K. Attenborough (NXP Semiconductors)
.
B-6
16h20
  Geometry and material optimization for programming current scaling in phase-change memory
U. Russo, A. Redaelli, D. Ielmini, A.L. Lacaita (Politecnico di Milano)
.
B-7
16h40
  Composition variations of nitrogen doped Ge-Sb-Te thin films and their read/write properties for phase change memories
H. Lim, D. Kim, G. Oh, S.J. Kang, N.H. Lim, Y. Ha, J. Bae, J. Oh, I. Park, H.D. Lee, J.T. Moon (Samsung)