ICMTD’07 – PRELIMINARY PROGRAM |
SESSION C : FINFLASH |
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14
h15
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FinFlash session opening
S. Lombardo (CNR-IMM)
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C-1
14h30
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FinFET SONOS non-volatile memory arrays
D. S. Golubovic, N. Akil, M. van Duuren, A. H. Miranda, R. van Schaijk (NXP Semiconductors)
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C-2
14h50
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Corner enhancement of FNT program/erase operations in nitride storage FinFLASH devices
L. Breuil, M. Rosmeulen, J. Loo, A. Furnémont, L. Haspeslagh, J. Van Houdt (IMEC)
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C-3
15h10
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Program / erase characteristics of ultra-scaled Si Nanocrystal FINFLASH memories
S. Lombardo (CNR-IMM), C. Gerardi (STMicroelectronics), D. Corso (CNR-IMM), G. Cina (STMicroelectronics), E. Tripiciano (CNR-IMM), V. Ancarani (STMicroelectronics), C. Buongiorno (CNR-IMM), E. Rimini (CNR-IMM), M. Melanotte (STMicroelectronics)
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15h30 |
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Coffee break
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C-4
16h00 |
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Physical Insights on Design of SONOS FinFETs Programmed with Channel Tunneling
F. Nardi, G. Iannaccone
(Universitŕ di Pisa)
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C-5
16h20 |
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Study of Programming Characteristics of 4-bit SONOS Flash Memory Using 3-Dimensional Transient Simulation
J.G. Yun, Y. Kim, I. H. Park, S. Cho, J. H. Lee, G. S. Lee, D.H. Kim, D. H. Lee, S.H. Park, J.D. Lee, B.G. Park ( Seoul National University)
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C-6
16h40 |
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Investigation of the impacts of channel length, fin width on Si-NC SOI-FinFlash memory characteristics
C. Jahan (Leti), J. Razafindramora (Leti), L. Perniola (Leti), M. Gély (Leti), C. Vizioz (Leti), A. Toffoli (Leti), F. Allain (Leti) S. Lombardo ( CNR-IMM) , C Bongiorno (CNR-IMM), G. Reimbold (Leti), F.Boulanger (Leti), B. De Salvo (Leti), S. Deleonibus (Leti) |
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