ICMTD’07 – PRELIMINARY PROGRAM |
SESSION D : FLOATING GATE |
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D-1
8h40
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Invited : “Current limitations of floating gate NVM and new alternatives”
A. Bergemont (Maxim integrated products)
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D-2
9h10
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The Moving Bits: Generation and Annealing
S. Mouhoubi ( L2MP) , T. Yao (AMI-Semiconductor) , A. Lowe ( AMI-Semiconductor) , P. Gassot ( AMI-Semiconductor) , F. Lalande (L2MP)
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D-3
9h30
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Improvement of Retention and Vth Window in Flash Memory Device through Optimization of Floating Gate Doping
C. Shen, J. Pu, M.F. Li, B. J. Cho (National University of Singapore)
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D-4
9h50
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A single-poly NVM based on a CMOS inverter with a common floating gate
Y. Roizin, A. Fenigstein, V. Kairys, Z. Kuritsky, A. Lahav (Tower)
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10h10 |
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Coffee break
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D-5
10h40 |
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Introduction of HC (Hemi Cylindrical)-FET for Development of NAND CTF (Charge Trap Flash) Cell with 76nm pitch Technology
S. Park, B. Hwang, H. Park, Y. Lee, S. Kwon, K. Lee, M. Kim, J. Kim, D. Kwak, Y. Yim, J. Park, K. Kim, K. Kim (Samsung)
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D-6
11h00 |
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A self-synchronized, 1V operation read circuitry for high speed advanced embedded flash memories
J. Fort, J.M. Daga (Atmel)
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D-7
11h20 |
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A low voltage, low power, highly reliable, multi-purpose, cost-competitive embedded non-volatile memory in 90nm node
G. Tao (NXP Semiconductors), E. van der Vegt (NXP Semiconductors), J.P. Carrère (STMicroelectronics), F. Larman (NXP Semiconductors), D. Boter (NXP Semiconductors), D. Dormans (NXP Semiconductors)
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D-8
11h40 |
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Data retention reliability of P+ Poly floating gate memories in logic CMOS processes
Y. Ma, R. Deng, B. Wang, A. Horch, R. Paulsen (Impinj Inc) |
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