ICMTD’07 – PRELIMINARY PROGRAM |
SESSION E : RRAM & DRAM |
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E-1
8h30
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Invited : “MRAM”
S. Ueno (Renesas)
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E-2
8h50
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Performances of a ZrO2 PEALD Dielectric for 45nm Embedded DRAM 3D MIM (Metal-Insulator-Metal) Stacked Capacitors
A. Berthelot (NXP Semiconductors) , C. Caillat (STMicroelectronics), H. Del-Puppo (Freescale), B. Icard (Leti), E. Deloffre (STMicroelectronics), N. Emonet (STMicroelectronics), M. Gros-Jean (STM), S. Barnola (Leti), C. Soonekindt (NXP Semiconductors), R. Pantel (STMicroelectronics), F. Lalanne (STMicroelectronics)
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E-3
9h10
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Conductance switching behaviour of a phenol substituted bithiophene memory device
M. Caironi, D. Natali, M. Sampietro, C. Bertarelli, A. Bianco, E. Canesi, G. Zerbi (Politecnico di Milano)
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E-4
9h30
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Improved CuTCNQ resistive non-volatile memories and a statistical study on their threshold voltage
J. Billen, R. Müller, J. Genoe, P. Heremans (IMEC/KUL)
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E-5
9h50
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The Influence of Different Electrode Materials on Resistive Switching in Cu:7,7,8,8-Tetracyanoquinodimethane Thin Films
T. Kever, U. Böttger, R. Waser (RWTH Aachen University)
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10h10 |
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Coffee break
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E-6
10h40 |
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Invited : “Copper Oxide Resistive Switching for Non-Volatile Memory Applications”
T.-N. Fang (Spansion)
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E-7
11h00 |
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Resistive switching and microstructure of NiO binary oxide films developed for OxRRAM non-volatile memories
L. Courtade (L2MP), Ch. Turquat (L2MP), Ch. Muller (L2MP), D. Goguenheim (L2MP), J.G. Lisoni (IMEC), L. Goux (IMEC), D.J. Wouters (IMEC)
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E-8
11h20 |
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Switching between two high-resistive states in Cu/chalcogenide/W structures for application in non-volatile memories
L. Goux (IMEC), J. G. Lisoni (IMEC), T. Gille (IMEC), K. De Meyer (IMEC), K. Attenborough (NXP), D. J. Wouters (IMEC)
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E-9
11h40 |
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1TBulk eDRAM a reliable concept for nanometre scale high density and low power applications
S. Puget (NXP Semiconductors), G. Bossu (STMicroelectronics), C. Guerin (STMicroelectronics), R. Ranica (STMicroelectronics), A. Villaret (STMicroelectronics), P. Masson (L2MP), J-M. Portal (L2MP), R. Bouchakour (L2MP), P. Mazoyer (STMicroelectronics), V. Huard (NXP Semiconductors), T. Skotnicki (STMicroelectronics) |
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