ICMTD’07 – PRELIMINARY PROGRAM |
SESSION H : HIGH-k FLASH& NANO-CRYSTALS |
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H-1
14h00
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A Systematic Study of High-K Interpoly Dielectric Structures for Floating Gate Flash Memory Devices
L. Zhang, W. He, D. S.H. Chan, B. J. Cho (National University of Singapore)
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H-2
14h20
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Use of Al2O3 as Inter-Poly Dielectric in a Production proven 130nm embedded Flash Technology
R. Kakoschke, L. Pescini, J.R. Power, K. van der Zanden, E.-O. Andersen, Y. Gong, R. Allinger (Infineon)
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H-3
14h40
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Investigation of aggressively scaled HfAlOx-based interpoly dielectric stacks for sub-45 nm nonvolatile memory technologies
B. Govoreanu (IMEC), D. Wellekens (IMEC) , L. Haspeslagh (IMEC), D.P. Brunco (Intel) , J. De Vos (IMEC), D. Ruiz Aguado (IMEC) , P. Blomme (IMEC), K. van der Zanden (Infineon), J. Van Houdt (IMEC)
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H-4
15h00
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High-Quality Aluminum-Oxide Tunnel Barriers for Scalable, Floating-Gate Random-Access Memories (FGRAM)
X. Liu, V. Patel, Z. Tan, K. K. Likharev, J. E. Lukens (Stony Brook University)
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15h20 |
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Coffee break
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H-5
15h50 |
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Intrinsic fixed charge and trapping properties of HfAlO interpoly dielectric layers
M. Bocquet ( Leti/ IMEP-CNRS ) , G. Molas (Leti), H. Grampeix (Leti), J. Buckley (Leti), F. Martin (Leti), J. P. Colonna (Leti), M. Gély (Leti), G. Pananakakis ( IMEP-CNRS ) , G. Ghibaudo ( IMEP-CNRS ) , B. De Salvo (Leti), S. Deleonibus (Leti)
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H-6
16h10 |
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A fully planar Stacked Gate Flash Technology with T-shaped Floating Gate for increased cell coupling ratio
J. De Vos, L. Haspeslagh, P. Blomme, M. Demand, K. Devriendt, F. Vleugels, D. Wellekens, J. Van Houdt (IMEC)
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H-7
16h30 |
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On the localization of the trapped charges in Silicon nanocrystal NOR Flash devices
S. Jacob (Atmel/Leti), L. Perniola (Leti), B. De Salvo (Leti), E. Jalaguier (Leti), G. Festes (Atmel), R. Coppard (Atmel), F. Boulanger (Leti), S.Deleonibus (Leti)
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H-8
16h50 |
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Electrostatics and its effect on spatial distribution of tunnel current in metal Nanocrystal flash memories
A. Nainani, A. Roy, P.K. Singh, G. Mukhopadhyay, J. Vasi (IIT Bombay) |
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